Complete Hermetics provides custom metallized ceramic components and services for electrical, mechanical, and
vacuum applications from R/D and small runs to high volume production.
Capable of working temperatures up to 800°C, excellent hermetic capabilities in range of 1x10-9 atm/cc/sec Helium,
and bonding strength up to 10,000 PSI range depending on the substrate.
Most Oxide Ceramics:
• Aluminum Oxide (Al2O3)
• Borides
• Carbides
• Nitrides
• Etcetera
Non-Oxide Ceramics:
• Aluminum Nitride (AlN)
• Silicon Carbide (SiC)
• Boron Carbide (B4C)
• Silicon Nitride (Si3N4)
• Etcetera
Complete Hermetics Also Provide Metallizations on:
• Carbon & Carbon Composites, Graphite & Composites, Diamonds
• Sapphires, and Glasses
Thick Film Metallizations
Complete Hermetics specialize in screen printable Molybdenum Manganese thich film metallization used as a surface
conductor on:
• Aluminum Oxide (Al2O3), Zirconium Dioxide (ZrO2), Glass-Ceramics, Forsterite, etc.
• Aluminum Nitride, Silicon Nitride, Silicon Carbide, etc.
Mo-Mg Thick Film:
• 500-1500 μ (13-38 μm)
• 1300°C-1500°C in hydrogenmitrogen controlled atmosphere
Nickel Plating:
• 100-400 μ (25-10 μm)
Complete Hermetic also provide screen printable Tungstein metallizing compositions used for buried electrode layers
in multiplyer ceramics. Typical firing cycle are1300oC-1700°C. Thick film ink also available for Ag, Ag-Pd, Ag-Pt, Au, Cu, Ni, etc.
Thin Film Metallizations
Thin Film Substrates
• Optic windows such as Sapphire, Quartz, Glass, Fused Silica, Zinc Selenide, Barium Floride, etc.
• Al2O3, SiC, BeO, YSZ, etc.
